Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/9545
Title: Fabrication Of ZnxCd1 – xSe Nanowires By CVD Process And Photoluminescence Studies
Authors: Vijayalakshmi, R.P.
Murali, G.
Amaranatha Reddy, D.
Venugopal, R.
Keywords: photoluminescence
semicon-ductor nanowires
II-VI nanowires
Issue Year: 2011
Publisher: Sumy State University Publishing
Citation: R.P. Vijayalakshmi, G. Murali, D. Amaranatha Reddy, R. Venugopal, J. Nano- Electron. Phys. 3 No1, 140 (2011)
Abstract: ZnxCd1 – xSe alloy nanowires with composition x = 0.2, 0.5 have been successfully synthesized by a simple thermal evaporation on the silicon substrate coated with a gold film of 20 Å thickness. The as-synthesized alloy nanowires, 70 - 150 nm in diameter and several tens of micrometer in length. The nanowires are single crystalline revealed from Transmission electron microscopy (TEM) and XRD measurement. The structure of ZnxCd1 – xSe nanowires are hexagonal wurtzite with [01-10] growth direction. Energy gap of the ZnxCd1 – xSe nanowires are determined from micro photoluminescence measurements. The energy gap increases with increasing Zn concentration. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9545
URI: http://essuir.sumdu.edu.ua/handle/123456789/9545
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views
Other102
Canada2
China23
Germany25
EU1
India4
Iran1
Italy1
Japan1
South Korea13
Kazakhstan2
Netherlands9
Russia8
Slovakia4
Turkey2
Ukraine20
United States22
Downloads
Other257
Chile1
China107
Germany7
Ireland1
India1
Russia1
United States7
Vietnam1


Files in This Item:
File Description SizeFormatDownloads 
17_fabrication.PDF1.8 MBAdobe PDF383Download


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.