A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Temperature Dependent Foster (RC) Thermal Network

Toufik, S.; Zohir, D.

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Title	A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Temperature Dependent Foster (RC) Thermal Network
Authors	Toufik, S. Zohir, D.
ORCID
Keywords	electro-thermal model junction temperature reliability MOSFET Genetic Algorithm PSpice
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/70913
Publisher	Sumy State University
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Citation	Toufik, S. A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Temperature Dependent Foster (RC) Thermal Network [Текст] / S. Toufik, D. Zohir // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04017. - DOI: 10.21272/jnep.10(4).04017.
Abstract	Thermal loading of MOSFET (Metal-Oxide-Semiconductor- Field-Effect-Transistor) model is a very important factor for the reliability of power electronics systems. Thus, the junction temperature must be accurately estimated. This paper presents a new electro-thermal (ET) model for low voltage Power MOSFET rated at (30 V/13 A) by PSpice simulator to estimate junction temperature (Tj) and power loss. The (ET) model is composed of electrical network model and (RC) thermal network model. The parameters of the (RC) thermal network model are extracted from datasheet using genetic algorithms (GA) method for computation of the transient thermal impedance (Zth(j – c)). The propose model reflects superior performance in terms of flexibility and accuracy. The results obtained indicate a good matching between proposed model and manufacturer’s data.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)