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Issue Year | Title | Author(s) | Type | Views | Downloads |
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2024 | Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals | Turgunov, N.A.; Akbarov, Sh.K.; Khaytimmetov, N.B.; Turmanova, R.M. | Article | 80 | 126 |
2024 | Effect of Aluminum (Al: 0, 1, 2 and 3 wt.%) Doping on Electrical Properties of ZnO:Al/p-Si Heterojunction for Optoelectronic Applications | Bouacheria, M.A.; Djelloul, A.; Benharrat, L.; Adnane, M. | Article | 74 | 78 |
2024 | Effect of GaSb Compound on Silicon Bandgap Energy | Iliev, Kh.M.; Zikrillaev, N.F.; Ayupov, K.S.; Isakov, B.O.; Abdurakhmanov, B.A.; Umarkhodjaeva, Z.N.; Isamiddinova, L.I. | Article | 18 | 34 |
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