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Title Numerical Simulation of Tin Based Perovskite Solar Cell: Effects of Absorber Parameters and Hole Transport Materials
Authors Aditi, Toshniwal
Akshay, Jariwala
Vipul, Kheraj
Opanasiuk, Anatolii Serhiiovych  
Panchal, C.J.
ORCID http://orcid.org/0000-0002-1888-3935
Keywords Tin perovskite Solar Cell
Simulation
HTM
SCAPS
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65899
Publisher Sumy State University
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Citation Numerical Simulation of Tin Based Perovskite Solar Cell: Effects of Absorber Parameters and Hole Transport Materials [Текст] / Aditi Toshniwal, Akshay Jariwala, Vipul Kheraj [et al.] // Журнал нано- та електронної фізики. – 2017. – Т.9, № 3. – 03038. – DOI: 10.21272/jnep.9(3).03038.
Abstract The organometal perovskite solar cells have shown stupendous development and have reached a power conversion efficiency (PCE) of 22.1%. However, the toxicity of lead in perovskite solar cells is a major challenge towards their incorporation into photovoltaic devices and thus needs to be addressed. Tin perovskite (CH3NH3SnI3) have attracted a lot of attention recently and could be a viable alternative material to replace lead perovskite in thin film solar cells. A detail understanding of effects of each component of a solar cell on its output performance is needed to further develop the technology. In this work, we performed a numerical simulation of a planar heterojunction tin based perovskite solar cell using SCAPS (Solar Cell Capacitance Simulator). Results revealed that thickness and defect density of the absorber material strongly influence the PCE of the device. Various types of hole transporting material (HTM) were compared and analysed to improve the performance of the solar cell. Parameters such as hole mobility and acceptor density of HTM also signified dependence on PCE of the device. These results indicate the possibility to design, fabricate and enhance the performance of tin based perovskite solar cells.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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