Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/65870
Title: Raman Study of CVD Graphene Irradiated by Swift Heavy Ions
Authors: Kolesov, E.A.
Tivanov, M.S.
Korolik, O.V.
Apel, P.Yu.
Skuratov, V.A.
Saad, A.M.
Komissarov, I.V.
Swic, A.
Żukowski, P.V.
Koltunowicz, T.N.
Keywords: Irradiated graphene
Defects
Raman spectroscopy
CVD
Swift heavy ions
Issue Year: 2017
Publisher: Sumy State University
Citation: Raman Study of CVD Graphene Irradiated by Swift Heavy Ions [Текст] / E.A. Kolesov, M.S. Tivanov, O.V. Korolik [et al.] // Журнал нано- та електронної фізики. - 2017. - Т.9, № 3. - 03020. - DOI: 10.21272/jnep.9(3).03020.
Abstract: CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm-2) and characterized by Raman spectroscopy. The defectiveness of pristine graphene was found to be dominated by grain boundaries while after irradiation it was determined by both grain boundaries and vacancies. Respectively, average inter-defect distance decreased from ~ 24 to ~ 13 nm. Calculations showed that the ion irradiation resulted in a decrease in charge carrier mobility from ~ 4.0 × 103 to ~ 1.3·103 cm2/V s. The results of the present study can be used to control graphene structure, especially vacancies concentration, and charge carrier mobility.
URI: http://essuir.sumdu.edu.ua/handle/123456789/65870
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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