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Title Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
Authors Singh, R.
Srinivasan, R.
ORCID
Keywords CdSe thin films
SHI
XRD
AFM
I-V
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/45518
Publisher Sumy State University
License
Citation Rajesh Singh, Radha Srinivasan, J. Nano- Electron. Phys. 8 No 2, 02036 (2016)
Abstract Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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