The Electronic Properties of Film Materials Based on Fe and Pt or Ge

Vlasenko, Oleksandr Volodymyrovych; Poduremne, Dmytro Vasylovych; Odnodvorets, Larysa Valentynivna

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/40986

Or use following links to share this resource in social networks: Recommend this item

Title	The Electronic Properties of Film Materials Based on Fe and Pt or Ge
Authors	Vlasenko, Oleksandr Volodymyrovych Poduremne, Dmytro Vasylovych Odnodvorets, Larysa Valentynivna
ORCID	http://orcid.org/0000-0003-4315-5654 http://orcid.org/0000-0002-8112-1933
Keywords	тонкие пленки тонкі плівки thin film интегральные схемы інтегральні схеми integrated circuits термическое испарение термічне випаровування thermal evaporation
Type	Conference Papers
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/40986
Publisher	Sumy state university
License
Citation	Vlasenko, О.V. The Electronic Properties of Film Materials Based on Fe and Pt or Ge [Текст] / О.V. Vlasenko, D.V. Poduremne, L.V. Odnodvorets ; supervisor I.Yu. Protsenko // Фізика, електроніка, електротехніка: матеріали та програма науково-технічної конференції, м. Суми, 20-25 квітня 2015 р. / Відп. за вип. С.І. Проценко. — Суми: СумДУ, 2015. — С. 141-142.
Abstract	On the basis of thin films in microelectronics made the following elements of integrated circuits (IC): film resistors; electrodes (electrode film capacitors, spiral inductors busducts, installation guides, closures MIS  transistors) contact paths and platforms; auxiliary elements. Electrical connection of metals and semiconductors with metallic conductors is performed using layered condensation and formation of ohmic contacts not rectifier, the quality of which is largely dependent parameters and characteristics of microelectronic devices, their reliability and durability
Appears in Collections:	Наукові видання (ЕлІТ)