Influence of alternating low voltage component on field photoemission current forma semiconductor tip

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/39931

Or use following links to share this resource in social networks: Recommend this item

Title	Influence of alternating low voltage component on field photoemission current forma semiconductor tip
Authors	Zaporozhchenko, A. Nepijko, S.A. Schonhense, G.
ORCID
Keywords	фотоемісія фотоэмиссия photoemission
Type	Conference Papers
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/39931
Publisher	Sumy State University
License
Citation	Zaporozhchenko, A. Influence of alternating low voltage component on field photoemission current forma semiconductor tip [Текст] / A. Zaporozhchenko, S.A. Nepijko, G. Schonhense // Фізика, електроніка, електротехніка : матеріали та програма науково-технічної конференції, м. Суми, 21-26 квітня 2014 р. / Відп. за вип. С.І. Проценко. - Суми : СумДУ, 2014. - С. 173.
Abstract	In this work we considered the influence of low alternating voltage of up to 100 V on the field photoemission process from a semiconductor tip under high voltage of 0.7-5.0 kV and photon excitation of 1.3 eV energy. Considered cathodes were made of high-resistivity silicon with p-type conductivity.
Appears in Collections:	Наукові видання (ЕлІТ)