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|Title:||Fabrication of a Few-Layer Graphene Electrodes for Molecular Electronics Devices|
Zant, van der H.S.J.
|Publisher:||Sumy State University|
|Citation:||Proc. NAP 3, 02NNPT05 (2014)|
|Abstract:||We report on thefabrication of a molecular transistor based on a single molecule trapped in a few-layergraphene nanogap. The device is pre-patterned with He-ion beam milling oroxygen plasma etching prior to nanogap formation. Pre-patterning helps tolocalize the gap, and to make it narrower, so that only a few or a singlemolecule can be trapped in it. The nanogap is formed by an electroburning techniqueat room temperature. In order to test the functionality of the device wedeposited diamino-terphenyl molecules in the nanogap. Three-terminal electricalmeasurements showed an increase of the current after deposition, and a gatevoltage dependence at low temperatures. Hence, pre-patterned few-layer graphenejunctions can be used for electron transport measurements through a terphenylmolecule with a future prospective towards more complex molecularconfigurations.|
|Appears in Collections:||Наукові видання (ЕлІТ)|
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