Thickness Dependent Growth of Epitaxial Iron Silicide Nanoobjects on Si (001)

Abstract

Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrate by conventional Fe evaporation and subsequent annealing. The initial Fe thickness was in the 0.1-6.0 nm range and the annealing temperature was 850 °C. The formed phases and structures were characterized by reflection high energy electron diffraction, and scanning electron microscopy. The electrical characteristics were investigated by I-V and C-V measurements, and by DLTS. The samples show silicide nanostructure formation in the whole thickness range. The shape of the nanostructures varied from rod like to triangular and quadratic depending on the initial Fe thickness. The size distribution of the formed iron silicide nanoobjects was not homogeneous, but they were oriented in square directions on Si(001). Higher thickness resulted in increased particles size. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35180