Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/31009
Title: Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
Authors: Parihar, Usha
Padha, N.
Panchal, C.J.
Keywords: Polycrystalline
schottky diodes
Flash evaporation
Current-voltage (I-V)
Capacitance-voltage (C-V) characteristics
Image force
Dipole lowering effects
Interface states
M-S junction template
Issue Year: 2013
Publisher: Сумський державний університет
Citation: Usha Parihar, N. Padha, C.J. Panchal, J. Nano- Electron. Phys. 5 No 2, 02015 (2013)
Abstract: Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31009
URI: http://essuir.sumdu.edu.ua/handle/123456789/31009
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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