Investigation of implantation-induced damage in indium phosphide for layer transfer applications

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Title	Investigation of implantation-induced damage in indium phosphide for layer transfer applications
Authors	Dadwal, U. Pareek, V. Scholz, R. Reiche, M. Chandra, S. Singh, R.
ORCID
Keywords	ion implantation damage TEM nanocracks nanobubbles
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/27924
Publisher	Видавництво СумДУ
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Citation	U. Dadwal, V. Pareek, R. Scholz, et al., J. Nano- Electron. Phys. 3 No1, 1081 (2011)
Abstract	100 keV H+ and He+ ion implantation was performed in 300 µm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27924
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)