Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/27880
Title: A 2-D analytical threshold voltage model for symmetric double gate MOSFET's using green’s function
Authors: Garg, Anoop
Sinha, S.N.
Agarwal, R.P.
Keywords: green’s function
minimum surface potential
threshold voltage
symmetric DG-mosfet
two dimensional (2D) poisson equations and undoped or lightly doped
Issue Year: 2011
Publisher: Видавництво СумДУ
Citation: Garg, Anoop A 2-D analytical threshold voltage model for symmetric double gate MOSFET's using green’s function [Текст] / A. Garg, S.N. Sinha, R.P. Agarwal // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 894-902.
Abstract: We propose a new two dimensional (2D) analytical solution of Threshold Voltage for undoped (or lightly doped) Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is assumed uniform doping profile in Si region. The proposed model compared with existing literature and experimental data and we obtain excellent agreements with previous techniques. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27880
URI: http://essuir.sumdu.edu.ua/handle/123456789/27880
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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