Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/27793
Title: Quantum Confinement in Cadmium Selenide Multilayer Thin Films Using Physical Vapour Deposition Method
Authors: Kumar, M. Melvin David
Suganthi, Devadason
Rajesh, S.
Keywords: Multilayer thin films
Quantum Confinement
CdSe
ZnSe
SiOx
Issue Year: 2012
Publisher: Сумський державний університет
Citation: M. Melvin David Kumar, Suganthi Devadason, S. Rajesh, J. Nano-Electron. Phys. 4 No 2, 1 (2012)
Abstract: Nanocrystals of CdSe have been produced in SiOx matrix layer and in ZnSe heterostructure layer by thermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinement effect of CdSe nanocrystals was analyzed from optical studies. Bulk CdSe has band-gap energy of 1.756 eV that can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured band-gap shifts with respect to the bulk value for quantum dot thin films are compared with the predictions of the effective mass approximation model (i.e., Brus model) and Quantum mechanical model. Sizes of the crystallites calculated from both models were coincident with each other. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27793
URI: http://essuir.sumdu.edu.ua/handle/123456789/27793
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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