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Title Prospects of III-Vs for Logic Applications
Authors Gomes, U.P.
Yadav, Y.K.
Chowdhury, S.
Ranjan, K.
Rathi, S.
Biswas, D.
ORCID
Keywords CMOS
III-V Materials
HEMT
Logic
Digital
Type Article
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/27780
Publisher Сумський державний університет
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Citation U.P. Gomes, Y.K. Yadav, S. Chowdhury, et al., J. Nano-Electron. Phys. 4 No 2, 02009 (2012)
Abstract The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology. The potential advantages of using III-Vs as channel materials for future III-V CMOS is its outstanding transport properties that have been widely accepted in high frequency RF applications. However, many significant challenges in front of III-V digital technology needs to be overcome before III-V CMOS becomes feasible for next generation high speed and low power logic applications. But it may be that this situation is changing given recent progress in the fabrication of high-mobility III-Vs based heterostructure electronic devices for logic applications to fulfill the needs towards the everyday evolving III-V CMOS technology. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27780
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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