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Title Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ulsi technology
Authors Ashok, M. Mahajan
Anil, G.K.
Brian, J.T.
ORCID
Keywords ellipsometer
еліпсометр
эллипсометр
gate dielectric
диэлектрика затвора
діелектрика затвора
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/21998
Publisher Видавництво СумДУ
License
Citation Ashok, M. Mahajan Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ulsi technology [Текст] / M.M. Ashok, G.K. Anil, J.T. Brian // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 647-650.
Abstract The high dielectric constant (high-k) thin film of Al2O3 was deposited by using Plasma enhanced atomic layer deposition (PE-ALD) technique. The electron beam evaporation system was used to deposit the Pt-Ti metal to fabricate the Pt-Ti/Al2O3/Si MOS capacitors. Thickness measurement of Al2O3 gate dielectric was carried out with variable angle spectroscopic ellipsometry, which is measured to be 2.83 nm. The MOS capacitors were characterized to evaluate the electrical properties using capacitance voltage (C-V) analyzer at different measurement frequencies. Capacitance voltage measurement shows that, dielectric constant k ranges from 7.87 to 10.44. In CV curve a slight negative shift is observed in the flatband voltage because of presence of trap charges in the Al2O3 MOS capacitor. A lower equivalent oxide thickness (EOT) of 1.057 nm is obtained for the fabricated Pt-Ti/Al2O3/Si MOS capacitors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/21998
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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