Influence of migration the radiation-induced excitations in hetero-fullerenes C58Si2 and C68Si2 of their probability of damage

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Title	Influence of migration the radiation-induced excitations in hetero-fullerenes C58Si2 and C68Si2 of their probability of damage
Authors	Kobets, M.V. Selyshchev, P.A.
ORCID
Keywords	irradiation облучение опромінення
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20915
Publisher	Sumy State University
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Citation	Kobets, M.V. Influence of migration the radiation-induced excitations in hetero-fullerenes C58Si2 and C68Si2 of their probability of damage [Текст] / M.V. Kobets, P.A. Selyshchev // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.2, P.ІІ. — C. 418-420.
Abstract	Theoretically investigated the role of migration of radiation-induced excitation in the damaged hetero-fullerenes C58Si2 and C68Si2. Defined expressions for the probability collapse of fullerenes different structures. Investigate the changing probability on irradiated conditions. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20915
Appears in Collections:	Наукові видання (ЕлІТ)