Temperature dependence of resistivity of porous silicon formed on N-substrates

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Title	Temperature dependence of resistivity of porous silicon formed on N-substrates
Authors	Redko, S.V. Chubenko, E.B. Klyshko, A.A. Kholostov, K.I. Bondarenko, V.P. Prischepa, S.I. Trezza, Michela Cirillo, Carla Attanasio, Carmine
ORCID
Keywords	porous silicon пористый кремний пористий кремній
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20638
Publisher	Видавництво СумДУ
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Citation	Temperature dependence of resistivity of porous silicon formed on N-substrates [Текст] / S.V. Redko, E.B. Chubenko, A.A. Klyshko et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 320-323.
Abstract	Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide temperature range are presented. Measurements show that at low temperatures there is a growth of resistance of four orders of magnitude compared to that at room temperature which occurs in a relatively narrow temperature range. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20638
Appears in Collections:	Наукові видання (ЕлІТ)